Study of electrically active defects in n-GaN layer

• Main Authors: Soh, C.B., Chi, D.Z., Ramam, A., Lim, H.F., Chua, S.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Capacitance transient; DLTs; GaN; Logarithmic capture kinetics; Majority carrier trap
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84247
• Institution: National University of Singapore

10.1016/S1369-8001(02)00025-2