A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

• Main Authors: Ang, D.S., Ling, C.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Others
• Published: 2014
• Subjects: Charge pumping (CP) current; Hot-carrier stress; Interface state; MOSFET; Neutral electron trap
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84385
• Institution: National University of Singapore

10.1109/LED.2003.815942