Morphology and crystal quality of InAs QDs grown by MOVPE using different grqwth modes
10.4028/0-87849-471-5.17
Saved in:
Main Authors: | Yin, Z., Tang, X., Zhang, J., Deny, S., Teng, J., Du, A., Chin, M.K. |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86933 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Composition Investigations of Nearly Lattice-Matched InGaPN Films on GaAs (001) Substrates Grown by MOVPE
by: Phongbandhu Sritonwong, et al.
Published: (2019) -
Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers
by: Yin, Z., et al.
Published: (2014) -
InAs self-organized quantum dots grown by molecular beam epitaxy using a "nucleation-augmented" method
by: Chia, C.K., et al.
Published: (2014) -
Homogeneity improvement of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy
by: Suwit Kiravittaya
Published: (2006) -
Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition
by: Tang, Xiaohong, et al.
Published: (2016)