Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

10.1016/j.mseb.2005.08.100

Saved in:
Bibliographic Details
Main Authors: Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/90600
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-90600
record_format dspace
spelling sg-nus-scholar.10635-906002023-10-30T21:37:51Z Ion-implant simulations: The effect of defect spatial correlation on damage accumulation Mok, K.R.C. Jaraiz, M. Martin-Bragado, I. Rubio, J.E. Castrillo, P. Pinacho, R. Srinivasan, M.P. Benistant, F. CHEMICAL & BIOMOLECULAR ENGINEERING Crystal-amorphous Ion-implant simulation Spatial correlation 10.1016/j.mseb.2005.08.100 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 124-125 SUPPL. 386-388 MSBTE 2014-10-09T07:07:03Z 2014-10-09T07:07:03Z 2005-12-05 Conference Paper Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F. (2005-12-05). Ion-implant simulations: The effect of defect spatial correlation on damage accumulation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 124-125 (SUPPL.) : 386-388. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2005.08.100 09215107 http://scholarbank.nus.edu.sg/handle/10635/90600 000233895800079 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Crystal-amorphous
Ion-implant simulation
Spatial correlation
spellingShingle Crystal-amorphous
Ion-implant simulation
Spatial correlation
Mok, K.R.C.
Jaraiz, M.
Martin-Bragado, I.
Rubio, J.E.
Castrillo, P.
Pinacho, R.
Srinivasan, M.P.
Benistant, F.
Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
description 10.1016/j.mseb.2005.08.100
author2 CHEMICAL & BIOMOLECULAR ENGINEERING
author_facet CHEMICAL & BIOMOLECULAR ENGINEERING
Mok, K.R.C.
Jaraiz, M.
Martin-Bragado, I.
Rubio, J.E.
Castrillo, P.
Pinacho, R.
Srinivasan, M.P.
Benistant, F.
format Conference or Workshop Item
author Mok, K.R.C.
Jaraiz, M.
Martin-Bragado, I.
Rubio, J.E.
Castrillo, P.
Pinacho, R.
Srinivasan, M.P.
Benistant, F.
author_sort Mok, K.R.C.
title Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
title_short Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
title_full Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
title_fullStr Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
title_full_unstemmed Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
title_sort ion-implant simulations: the effect of defect spatial correlation on damage accumulation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/90600
_version_ 1781785550471036928