Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

10.1021/ol301014d

Saved in:

Bibliographic Details
Main Authors:	Ye, Q., Chang, J., Huang, K.-W., Dai, G., Zhang, J., Chen, Z.-K., Wu, J., Chi, C.
Other Authors:	CHEMISTRY
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/94034
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

TCNQ-embedded heptacene and nonacene: Synthesis, characterization and physical properties
by: Ye, Q., et al.
Published: (2014)

Thiophene-fused tetracene diimide with low band gap and ambipolar behavior
by: Ye, Q., et al.
Published: (2014)

A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor
by: Chang, J., et al.
Published: (2014)

Stepwise cyanation of naphthalene diimide for n-channel field-effect transistors
by: Chang, J., et al.
Published: (2014)

Cyanated diazatetracene diimides with ultrahigh electron affinity for n-channel field effect transistors
by: Ye, Q., et al.
Published: (2014)

Thiophene-tetrafluorophenyl-thiophene: A promising building block for ambipolar organic field effect transistors
by: Sonar Prashant, et al.
Published: (2016)

Bisacenaphthopyrazinoquinoxaline derivatives: Synthesis, physical properties and applications as semiconductors for n-channel field effect transistors
by: Tong, C., et al.
Published: (2014)

Thienoacene-fused pentalenes: Syntheses, structures, physical properties and applications for organic field-effect transistors
by: Dai Gaole, et al.
Published: (2016)

Tin-incorporated source/drain and channel materials for field-effect transistors
by: Yeo, Y.-C., et al.
Published: (2014)

A stable heptacene derivative substituted with electron-deficient trifluoromethylphenyl and triisopropylsilylethynyl groups
by: Qu, H., et al.
Published: (2014)

High pressure Raman studies of 7,7,8,8-tetracyanoquinodimethane (TCNQ) and CuTCNQ
by: Hu, Z.P., et al.
Published: (2014)

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
by: Ren, C., et al.
Published: (2014)

Single photon triggered dianion formation in TCNQ and F4TCNQ crystals
by: Ma, Lin, et al.
Published: (2017)

Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors
by: Dai, G, et al.
Published: (2020)

A Cyclopenta-fused Dibenzo[b,d]thiophene-co-Phenanthrene Macrocyclic Tetraradicaloid
by: X. Lu, et al.
Published: (2021)

Thiophene‐fused‐heteroaromatic diones as promising NIR reflectors for radiative cooling
by: Chen, Wangqiao, et al.
Published: (2020)

p-Channel, n-Channel and ambipolar field-effect transistors based on functionalized carbon nanotube networks
by: Goh, R.G.S., et al.
Published: (2014)

Microstructure and electrical characteristics of ITO/CuPc/TCNQ/Al and ITO/TCNQ/CuPc/Al heterojunctions
by: Theerasak Juagwon, et al.
Published: (2018)

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
by: Ivana, et al.
Published: (2014)

Bandgap Engineering of an Aryl-Fused Tetrathianaphthalene for Visible-Blind Organic Field-Effect Transistors
by: Zhang, Lijuan, et al.
Published: (2022)

RAMAN SCATTERING STUDIES OF KNBO, TCNQ AND CUTCNQ
by: HU ZHIPING
Published: (2020)

π-Extended pyrrole-fused heteropine: synthesis, properties, and application in organic field-effect transistors
by: Wang, Weifan, et al.
Published: (2023)

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
by: Yang, Y., et al.
Published: (2014)

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
by: Ivana, et al.
Published: (2013)

The stoichiometry of TCNQ-based organic charge-transfer cocrystals
by: Gao, Jiaoyang, et al.
Published: (2021)

6,13-Dicyano pentacene-2,3:9,10-bis(dicarboximide) for solution-processed air-stable n-channel field effect transistors and complementary circuit
by: Chang, J., et al.
Published: (2014)

Solution-processable n-type semiconductors based on unsymmetrical naphthalene imides: Synthesis, characterization, and applications in field-effect transistors
by: Shao, J., et al.
Published: (2014)

Post-stress dual-trap interaction in hot-carrier stressed submicrometer n-channel metal-oxide-semiconductor field-effect-transistors
by: Chim, W.K., et al.
Published: (2014)

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
by: Koh, S.-M., et al.
Published: (2014)

Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
by: Koh, S.-M., et al.
Published: (2014)

Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors
by: Koh, A.T.-Y., et al.
Published: (2014)

Organic dyes incorporating a thiophene or furan moiety for efficient dye-sensitized solar cells
by: He, J., et al.
Published: (2014)

Chemical reaction between Ag nanoparticles and TCNQ microparticles in aqueous solution
by: Xiao, Jinchong, et al.
Published: (2012)

Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
by: Chim, W.K., et al.
Published: (2014)

Dithieno-naphthalimide based copolymers for air-stable field effect transistors: Synthesis, characterization and device performance
by: Dai, G., et al.
Published: (2014)

Solution-processable n-type and ambipolar semiconductors based on a fused cyclopentadithiophenebis(dicyanovinylene) core
by: Shi, X., et al.
Published: (2014)

Strained channel transistor using strain field induced by source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)

Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistors
by: Ong, S.Y., et al.
Published: (2014)

Turning on the biradical state of tetracyano-perylene and quaterrylenequinodimethanes by incorporation of additional thiophene rings
by: Zeng, Zebing, et al.
Published: (2018)

Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
by: Yu, H.P., et al.
Published: (2014)