Band alignment and thermal stability of HfO2 gate dielectric on SiC

10.1063/1.2969061

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Bibliographic Details
Main Authors: Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/95846
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Institution: National University of Singapore