Band alignment and thermal stability of HfO2 gate dielectric on SiC
10.1063/1.2969061
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Main Authors: | Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. |
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Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/95846 |
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Institution: | National University of Singapore |
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