Electron tunneling through ultrathin boron nitride crystalline barriers

Electron tunneling through ultrathin boron nitride crystalline barriers

10.1021/nl3002205

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Bibliographic Details
Main Authors: Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Katsnelson, M.I., Eaves, L., Morozov, S.V., Mayorov, A.S., Peres, N.M.R., Castro Neto, A.H., Leist, J., Geim, A.K., Ponomarenko, L.A., Novoselov, K.S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
boron nitride
conductive AFM
Electron tunneling
grapheme
ultrathin
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96414
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Institution: National University of Singapore

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