Electronic structure of germanium nitride considered for gate dielectrics
10.1063/1.2747214
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sg-nus-scholar.10635-964322023-10-25T07:39:00Z Electronic structure of germanium nitride considered for gate dielectrics Yang, M. Wang, S.J. Feng, Y.P. Peng, G.W. Sun, Y.Y. PHYSICS 10.1063/1.2747214 Journal of Applied Physics 102 1 - JAPIA 2014-10-16T09:23:22Z 2014-10-16T09:23:22Z 2007 Article Yang, M., Wang, S.J., Feng, Y.P., Peng, G.W., Sun, Y.Y. (2007). Electronic structure of germanium nitride considered for gate dielectrics. Journal of Applied Physics 102 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2747214 00218979 http://scholarbank.nus.edu.sg/handle/10635/96432 000248018300023 Scopus |
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PHYSICS Yang, M. Wang, S.J. Feng, Y.P. Peng, G.W. Sun, Y.Y. |
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Yang, M. Wang, S.J. Feng, Y.P. Peng, G.W. Sun, Y.Y. |
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Yang, M. Wang, S.J. Feng, Y.P. Peng, G.W. Sun, Y.Y. Electronic structure of germanium nitride considered for gate dielectrics |
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Yang, M. |
title |
Electronic structure of germanium nitride considered for gate dielectrics |
title_short |
Electronic structure of germanium nitride considered for gate dielectrics |
title_full |
Electronic structure of germanium nitride considered for gate dielectrics |
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Electronic structure of germanium nitride considered for gate dielectrics |
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Electronic structure of germanium nitride considered for gate dielectrics |
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electronic structure of germanium nitride considered for gate dielectrics |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/96432 |
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