Strain-engineered surface transport in Si(001): Complete isolation of the surface state via tensile strain
10.1103/PhysRevLett.111.246801
Saved in:
Main Authors: | Zhou, M., Liu, Z., Wang, Z., Bai, Z., Feng, Y., Lagally, M.G., Liu, F. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/98032 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Structural instability of epitaxial (001) BiFeO3 thin films under tensile strain
by: Fan, Z., et al.
Published: (2014) -
Adsorption and diffusion of Co on the Si(001) surface
by: Peng, G.W., et al.
Published: (2014) -
Strain-mediated uniform islands in stacked Ge/Si(001) layers
by: Xu, M., et al.
Published: (2014) -
Complete Genome Sequence of Schaalia turicensis Strain CT001, Isolated from a Patient with Gonococcal Urethritis in Thailand
by: Natakorn Nokchan, et al.
Published: (2022) -
Effects of Si(001) surface amorphization on ErSi2 thin film
by: Tan, E.J., et al.
Published: (2014)