Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy

Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy

10.1016/j.apsusc.2004.06.087

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Bibliographic Details
Main Authors: Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
HfO2/Si(0 01)
High-resolution
Strain profile
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98651
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Institution: National University of Singapore
Description
Summary:10.1016/j.apsusc.2004.06.087

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