Detection of oxidation stacking faults in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer

Journal of Crystal Growth

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Bibliographic Details
Main Authors: Ng, S.C., Taijing, L.
Other Authors: PHYSICS
Format: Others
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98970
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Institution: National University of Singapore
Description
Summary:Journal of Crystal Growth