High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide

• Main Authors: J. Khamsuwan, S. Intarasiri, K. Kirkby, C. Jeynes, P. K. Chu, T. Kamwanna, L. D. Yu
• Format: Journal
• Published: 2018
• Subjects: Chemistry; Materials Science; Physics and Astronomy
• Online Access: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=80055101622&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/49810
• Institution: Chiang Mai University

Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence car...