High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide
Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence car...
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| Main Authors: | , , , , , , |
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| Format: | Journal |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=80055101622&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/49810 |
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| Institution: | Chiang Mai University |