High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide
Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence car...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| 格式: | 雜誌 |
| 出版: |
2018
|
| 主題: | |
| 在線閱讀: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=80055101622&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/49810 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|