Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-react...

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Main Authors: Tohsophon T., Hupkes J., Calnan S., Reetz W., Rech B., Beyer W., Sirikulrat N.
Format: Article
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-33646538800&partnerID=40&md5=77552c4f720a668fe34a5548b9c92d2d
http://cmuir.cmu.ac.th/handle/6653943832/5105
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spelling th-cmuir.6653943832-51052014-08-30T02:56:09Z Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering Tohsophon T. Hupkes J. Calnan S. Reetz W. Rech B. Beyer W. Sirikulrat N. The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 °C were required. Possible mechanisms explaining the experimental results are discussed. © 2005 Elsevier B.V. All rights reserved. 2014-08-30T02:56:09Z 2014-08-30T02:56:09Z 2006 Article 00406090 10.1016/j.tsf.2005.12.130 THSFA http://www.scopus.com/inward/record.url?eid=2-s2.0-33646538800&partnerID=40&md5=77552c4f720a668fe34a5548b9c92d2d http://cmuir.cmu.ac.th/handle/6653943832/5105 English
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
language English
description The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 °C were required. Possible mechanisms explaining the experimental results are discussed. © 2005 Elsevier B.V. All rights reserved.
format Article
author Tohsophon T.
Hupkes J.
Calnan S.
Reetz W.
Rech B.
Beyer W.
Sirikulrat N.
spellingShingle Tohsophon T.
Hupkes J.
Calnan S.
Reetz W.
Rech B.
Beyer W.
Sirikulrat N.
Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
author_facet Tohsophon T.
Hupkes J.
Calnan S.
Reetz W.
Rech B.
Beyer W.
Sirikulrat N.
author_sort Tohsophon T.
title Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
title_short Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
title_full Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
title_fullStr Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
title_full_unstemmed Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
title_sort damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
publishDate 2014
url http://www.scopus.com/inward/record.url?eid=2-s2.0-33646538800&partnerID=40&md5=77552c4f720a668fe34a5548b9c92d2d
http://cmuir.cmu.ac.th/handle/6653943832/5105
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