Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

• Main Authors: Intarasiri S., Yu L.D., Singkarat S., Hallan A., Lu J., Ottosson M., Jensen J., Possnert G.
• Format: Article
• Language: English
• Published: 2014
• Online Access: http://www.scopus.com/inward/record.url?eid=2-s2.0-34247585163&partnerID=40&md5=43afd7288ea947d12eb9a5b3c2bbe8fa; http://cmuir.cmu.ac.th/handle/6653943832/5258
• Institution: Chiang Mai University

Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C 12 + implant...