Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide
Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C 12 + implant...
Saved in:
Main Authors: | Intarasiri S., Yu L.D., Singkarat S., Hallan A., Lu J., Ottosson M., Jensen J., Possnert G. |
---|---|
Format: | Article |
Language: | English |
Published: |
2014
|
Online Access: | http://www.scopus.com/inward/record.url?eid=2-s2.0-34247585163&partnerID=40&md5=43afd7288ea947d12eb9a5b3c2bbe8fa http://cmuir.cmu.ac.th/handle/6653943832/5258 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Chiang Mai University |
Language: | English |
Similar Items
-
Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide
by: S. Intarasiri, et al.
Published: (2018) -
Ion beam synthesis of silicon carbide
by: Intarasiri S., et al.
Published: (2014) -
Ion beam synthesis of silicon carbide
by: S. Intarasiri, et al.
Published: (2018) -
Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA
by: R. Norarat, et al.
Published: (2018) -
Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA
by: R. Norarat, et al.
Published: (2018)