Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas

© 2016 IOP Publishing Ltd. This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiNx:H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiNX:H film, this work adopts a systematic plasm...

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Main Authors: B. B. Sahu, Kyung S. Shin, Jeon G. Han
Format: Journal
Published: 2018
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http://cmuir.cmu.ac.th/jspui/handle/6653943832/56306
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-563062018-09-05T03:14:01Z Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas B. B. Sahu Kyung S. Shin Jeon G. Han Physics and Astronomy © 2016 IOP Publishing Ltd. This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiNx:H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiNX:H film, this work adopts a systematic plasma diagnostic approach in the nitrogen-silane and nitrogen-silane-ammonia plasmas. This work also evaluates the capability of plasma and radical formation by utilizing different plasma sources in the PECVD process. For the plasma diagnostics, we have purposefully used the combination of optical emission spectroscopy (OES), intensified CCD (ICCD) camera, vacuum ultraviolet absorption spectroscopy (VUVAS), and RF compensated Langmuir probe (LP). Data reveal that there is significant enhancement in the atomic nitrogen radicals, plasma densities, and film properties using the hybrid plasmas. Measurements show that addition of a small amount of NH3can significantly reduce the electron temperature, plasma, and radical density. Also, optical and chemical properties of the deposited films are investigated on the basis of plasma diagnostics. Good quality SiNx:H films, with atomic nitrogen to hydrogen ratio of 4:1, are fabricated. The plasma chemistry of the hybrid plasmas is also discussed for its utility for plasma applications. 2018-09-05T03:14:01Z 2018-09-05T03:14:01Z 2016-01-05 Journal 13616595 09630252 2-s2.0-84957895200 10.1088/0963-0252/25/1/015017 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84957895200&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/56306
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Physics and Astronomy
spellingShingle Physics and Astronomy
B. B. Sahu
Kyung S. Shin
Jeon G. Han
Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas
description © 2016 IOP Publishing Ltd. This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiNx:H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiNX:H film, this work adopts a systematic plasma diagnostic approach in the nitrogen-silane and nitrogen-silane-ammonia plasmas. This work also evaluates the capability of plasma and radical formation by utilizing different plasma sources in the PECVD process. For the plasma diagnostics, we have purposefully used the combination of optical emission spectroscopy (OES), intensified CCD (ICCD) camera, vacuum ultraviolet absorption spectroscopy (VUVAS), and RF compensated Langmuir probe (LP). Data reveal that there is significant enhancement in the atomic nitrogen radicals, plasma densities, and film properties using the hybrid plasmas. Measurements show that addition of a small amount of NH3can significantly reduce the electron temperature, plasma, and radical density. Also, optical and chemical properties of the deposited films are investigated on the basis of plasma diagnostics. Good quality SiNx:H films, with atomic nitrogen to hydrogen ratio of 4:1, are fabricated. The plasma chemistry of the hybrid plasmas is also discussed for its utility for plasma applications.
format Journal
author B. B. Sahu
Kyung S. Shin
Jeon G. Han
author_facet B. B. Sahu
Kyung S. Shin
Jeon G. Han
author_sort B. B. Sahu
title Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas
title_short Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas
title_full Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas
title_fullStr Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas
title_full_unstemmed Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas
title_sort integrated approach for low-temperature synthesis of high-quality silicon nitride films in pecvd using rf-uhf hybrid plasmas
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84957895200&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/56306
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