Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas
© 2016 IOP Publishing Ltd. This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiNx:H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiNX:H film, this work adopts a systematic plasm...
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th-cmuir.6653943832-563062018-09-05T03:14:01Z Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas B. B. Sahu Kyung S. Shin Jeon G. Han Physics and Astronomy © 2016 IOP Publishing Ltd. This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiNx:H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiNX:H film, this work adopts a systematic plasma diagnostic approach in the nitrogen-silane and nitrogen-silane-ammonia plasmas. This work also evaluates the capability of plasma and radical formation by utilizing different plasma sources in the PECVD process. For the plasma diagnostics, we have purposefully used the combination of optical emission spectroscopy (OES), intensified CCD (ICCD) camera, vacuum ultraviolet absorption spectroscopy (VUVAS), and RF compensated Langmuir probe (LP). Data reveal that there is significant enhancement in the atomic nitrogen radicals, plasma densities, and film properties using the hybrid plasmas. Measurements show that addition of a small amount of NH3can significantly reduce the electron temperature, plasma, and radical density. Also, optical and chemical properties of the deposited films are investigated on the basis of plasma diagnostics. Good quality SiNx:H films, with atomic nitrogen to hydrogen ratio of 4:1, are fabricated. The plasma chemistry of the hybrid plasmas is also discussed for its utility for plasma applications. 2018-09-05T03:14:01Z 2018-09-05T03:14:01Z 2016-01-05 Journal 13616595 09630252 2-s2.0-84957895200 10.1088/0963-0252/25/1/015017 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84957895200&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/56306 |
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Physics and Astronomy B. B. Sahu Kyung S. Shin Jeon G. Han Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas |
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© 2016 IOP Publishing Ltd. This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiNx:H) film in radio frequency (RF) and RF-ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiNX:H film, this work adopts a systematic plasma diagnostic approach in the nitrogen-silane and nitrogen-silane-ammonia plasmas. This work also evaluates the capability of plasma and radical formation by utilizing different plasma sources in the PECVD process. For the plasma diagnostics, we have purposefully used the combination of optical emission spectroscopy (OES), intensified CCD (ICCD) camera, vacuum ultraviolet absorption spectroscopy (VUVAS), and RF compensated Langmuir probe (LP). Data reveal that there is significant enhancement in the atomic nitrogen radicals, plasma densities, and film properties using the hybrid plasmas. Measurements show that addition of a small amount of NH3can significantly reduce the electron temperature, plasma, and radical density. Also, optical and chemical properties of the deposited films are investigated on the basis of plasma diagnostics. Good quality SiNx:H films, with atomic nitrogen to hydrogen ratio of 4:1, are fabricated. The plasma chemistry of the hybrid plasmas is also discussed for its utility for plasma applications. |
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Journal |
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B. B. Sahu Kyung S. Shin Jeon G. Han |
author_facet |
B. B. Sahu Kyung S. Shin Jeon G. Han |
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B. B. Sahu |
title |
Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas |
title_short |
Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas |
title_full |
Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas |
title_fullStr |
Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas |
title_full_unstemmed |
Integrated approach for low-temperature synthesis of high-quality silicon nitride films in PECVD using RF-UHF hybrid plasmas |
title_sort |
integrated approach for low-temperature synthesis of high-quality silicon nitride films in pecvd using rf-uhf hybrid plasmas |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84957895200&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/56306 |
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