Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering

Aluminum and indium co-doped zinc oxide (AIZO) thin films were prepared by direct current (dc) magnetron sputtering on glass substrate in pure argon atmosphere. Three inches of zinc oxide ceramic with 0.5 wt.% of aluminum and indium doping was used as a target in static mode. The influence of sputte...

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Main Authors: Tohsophon T., Wattanasupinyo N., Silskulsuk B., Sirikulrat N.
Format: Conference or Workshop Item
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-80755175357&partnerID=40&md5=58ec666bb61e78bc68723262f8314f60
http://cmuir.cmu.ac.th/handle/6653943832/5984
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Institution: Chiang Mai University
Language: English
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spelling th-cmuir.6653943832-59842014-08-30T03:23:42Z Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering Tohsophon T. Wattanasupinyo N. Silskulsuk B. Sirikulrat N. Aluminum and indium co-doped zinc oxide (AIZO) thin films were prepared by direct current (dc) magnetron sputtering on glass substrate in pure argon atmosphere. Three inches of zinc oxide ceramic with 0.5 wt.% of aluminum and indium doping was used as a target in static mode. The influence of sputtering conditions i.e. substrate-target distance, pressure and power on AIZO films was studied. The electrical resistivity and microstructure of thin films were investigated by the four point probe technique and the scanning electron microscope, respectively. The optical transmittance of AIZO films was measured by UV visible spectrophotometer in the wavelength of 300-1100 nm. Depending on the deposited conditions, highly transparent films up to 80% with low resistivities in the range of 2.6-7.9 × 10- 4 Ω cm were achieved at room temperature. Possible mechanism in the processing which, ultimately, determines the physical properties of AIZO films will be discussed. © 2011 Elsevier B.V. All rights reserved. 2014-08-30T03:23:42Z 2014-08-30T03:23:42Z 2011 Conference Paper 406090 10.1016/j.tsf.2011.06.079 THSFA http://www.scopus.com/inward/record.url?eid=2-s2.0-80755175357&partnerID=40&md5=58ec666bb61e78bc68723262f8314f60 http://cmuir.cmu.ac.th/handle/6653943832/5984 English
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
language English
description Aluminum and indium co-doped zinc oxide (AIZO) thin films were prepared by direct current (dc) magnetron sputtering on glass substrate in pure argon atmosphere. Three inches of zinc oxide ceramic with 0.5 wt.% of aluminum and indium doping was used as a target in static mode. The influence of sputtering conditions i.e. substrate-target distance, pressure and power on AIZO films was studied. The electrical resistivity and microstructure of thin films were investigated by the four point probe technique and the scanning electron microscope, respectively. The optical transmittance of AIZO films was measured by UV visible spectrophotometer in the wavelength of 300-1100 nm. Depending on the deposited conditions, highly transparent films up to 80% with low resistivities in the range of 2.6-7.9 × 10- 4 Ω cm were achieved at room temperature. Possible mechanism in the processing which, ultimately, determines the physical properties of AIZO films will be discussed. © 2011 Elsevier B.V. All rights reserved.
format Conference or Workshop Item
author Tohsophon T.
Wattanasupinyo N.
Silskulsuk B.
Sirikulrat N.
spellingShingle Tohsophon T.
Wattanasupinyo N.
Silskulsuk B.
Sirikulrat N.
Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
author_facet Tohsophon T.
Wattanasupinyo N.
Silskulsuk B.
Sirikulrat N.
author_sort Tohsophon T.
title Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
title_short Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
title_full Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
title_fullStr Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
title_full_unstemmed Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
title_sort effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
publishDate 2014
url http://www.scopus.com/inward/record.url?eid=2-s2.0-80755175357&partnerID=40&md5=58ec666bb61e78bc68723262f8314f60
http://cmuir.cmu.ac.th/handle/6653943832/5984
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