Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

بواسطة Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2013

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

بواسطة Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan
منشور في 2015

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

بواسطة Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2025

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

بواسطة Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, Subramaniam, Ranjan, K.
منشور في 2014

A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression

بواسطة Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2016

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate

بواسطة Whiteside, Matthew, Arulkumaran, Subramaniam, Dikme, Yilmaz, Sandupatla, Abhinay, Ng, Geok Ing
منشور في 2021

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

بواسطة Vicknesh, S., Ng, G. I., Liu, Z. H., Selvaraj, S. L., Egawa, T., Arulkumaran, Subramaniam
منشور في 2014

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors

بواسطة Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi
منشور في 2020

Microwave research activities in Singapore

بواسطة Yeo, S. P., Ing, G. I., Alphones, Arokiaswami, Ting, S. K., Ong, L. C., Arulkumaran, Subramaniam
منشور في 2013

High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate

بواسطة Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.
منشور في 2015

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy

بواسطة Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok
منشور في 2013

Band alignment between GaN and ZrO2 formed by atomic layer deposition

بواسطة Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
منشور في 2014

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

بواسطة Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong
منشور في 2017

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering

بواسطة Fiedler, Holger, Leveneur, Jérôme, Mitchell, David R. G., Arulkumaran, Subramaniam, Ng, Geok Ing, Alphones, Arokiaswami, Kennedy, John
منشور في 2021

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

بواسطة Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Manoj Kumar, Chandra Mohan, Anand, Mulagumoottil Jesudas, Liu, Zhi Hong
منشور في 2015

Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

بواسطة Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud
منشور في 2015

In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

بواسطة Teo, Khoon Leng, Ng, Geok Ing, Ranjan, Kumud, Shoron, O. F., Arulkumaran, Subramaniam, Rajan, S., Dolmanan, S. B., Manoj Kumar, Chandra Mohan, Tripathy, S.
منشور في 2015

Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency

بواسطة Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P., Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi
منشور في 2020

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

بواسطة Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
منشور في 2015

Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN

بواسطة Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
منشور في 2015