Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

by Yu, H.Y., Chen, J.D., Li, M.F., Lee, S.J., Kwong, D.L., Van Dal, M., Kittl, J.A., Lauwers, A., Augendre, E., Kubicek, S., Zhao, C., Bender, H., Brijs, B., Geenen, L., Benedetti, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Processing technologies for advanced Ge devices

by Loo, R, Hikavyy, A.Y, Witters, L, Schulze, A, Arimura, H, Cott, D, Mitard, J, Porret, C, Mertens, H, Ryan, P, Wall, J, Matney, K, Wormington, M, Favia, P, Richard, O, Bender, H, Thean, A, Horiguchi, N, Mocuta, D, Collaert, N
Published 2020