CHINESE WORD SEGMENTATION AND NEW WORD DETECTION

by NG HONG I
Published 2019

CHINESE WORD SEGMENTATION AND NEW WORD DETECTION

by NG HONG I
Published 2019

Alfentanil Co-induction for laryngeal mask insertion

by Ang, S., Cheong, K.F., Ng, T.I.
Published 2012

I love my career, don't I? the influence of organisation-based support on expatriates' adjustment and occupational withdrawal intention

by Chan, H.L., Toh, P.S., Ng, S.I., Zawawi, D.
Published 2021

Obstetric admissions to the intensive care unit--a retrospective review.

by Ng, T.I., Lim, E., Tweed, W.A., Arulkumaran, S.
Published 2013

Obstetric admissions to the intensive care unit--a retrospective review.

by Ng, T.I., Lim, E., Tweed, W.A., Arulkumaran, S.
Published 2016

Oral hygiene of patients with cancer in an acute oncology ward: A best practice project

by Wee, W.M.Y., Ang, E., Ng, P.I.
Published 2016

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

by Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, Subramaniam, Ranjan, K.
Published 2014

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

by Vicknesh, S., Ng, G. I., Liu, Z. H., Selvaraj, S. L., Egawa, T., Arulkumaran, Subramaniam
Published 2014

High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate

by Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.
Published 2015

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

by Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.
Published 2015

Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs

by Rao, R.V.V.V.J., Joe, J., Chia, Y.W.M., Ang, K.S., Ng, G.I.
Published 2014

Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs

by Rao, Rapeta V.V.V.J., Joe, J., Chia, Y.W.Michael, Ang, K.S., Wang, H., Ng, G.I.
Published 2014

A novel method for the De-embedding of S-parameters of double heterojunction δ-doped PHEMTs - Modeling and measurements

by Rao, R.V.V.V.J., Joe, J., Chia, Y.W.M., Ang, K.S., Wang, H., Ng, G.I.
Published 2014

Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

by Arulkumaran, S., Ng, G. I., Manoj Kumar, C. M., Ranjan, K., Teo, K. L., Shoron, O. F., Rajan, S., Bin Dolmanan, S., Tripathy, S.
Published 2015

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

by Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., Foo, S. C., Syamal, B., Zhou, X.
Published 2015