Power MOSFET having enhanced breakdown voltage

بواسطة LIANG, YUNG CHII, SAMUDRA, GANESH SHANKAR, GAN, KIAN PAAU, YANG, XIN
منشور في 2012

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

بواسطة Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
منشور في 2014

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

بواسطة SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS, LEE, JAMES, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
منشور في 2012

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

بواسطة Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
منشور في 2014

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

بواسطة SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS YOUG WEE, LEE, JAMES YONG MENG, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
منشور في 2012