Power MOSFET having enhanced breakdown voltage

由 LIANG, YUNG CHII, SAMUDRA, GANESH SHANKAR, GAN, KIAN PAAU, YANG, XIN
出版 2012

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

由 Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
出版 2014

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

由 SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS, LEE, JAMES, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
出版 2012

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

由 Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
出版 2014

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

由 SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS YOUG WEE, LEE, JAMES YONG MENG, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
出版 2012