Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

بواسطة Vicknesh Sahmuganathan
منشور في 2008

Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

بواسطة Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2013

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

بواسطة Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan
منشور في 2015

Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

بواسطة Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud
منشور في 2015

Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

بواسطة Dolmanan, S. B., Teo, S. L., Arulkumaran, Subramaniam, Lin, Vivian Kaixin, Ng, Geok Ing, Vicknesh, Sahmuganathan, Tan, Joyce Pei Ying, Kumar, M. Krishna, Tripathy, Sudhiranjan
منشور في 2013

Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal

بواسطة Arulkumaran, Subramaniam, Ng, Geok Ing, Ranjan, Kumud, Kumar, Chandra Mohan Manoj, Foo, Siew Chuen, Ang, Kian Siong, Vicknesh, Sahmuganathan, Dolmanan, Surani Bin, Bhat, Thirumaleshwara, Tripathy, Sudhiranjan
منشور في 2015

Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

بواسطة Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan
منشور في 2013

GaN-on-Silicon integration technology

بواسطة Ng, Geok Ing, Arulkumaran, Subramaniam, Vicknesh, Sahmuganathan, Wang, H., Ang, K. S., Kumar, C. M. Manoj, Ranjan, K., Lo, Guo-Qiang, Tripathy, Sudhiranjan, Boon, Chirn Chye, Lim, Wei Meng
منشور في 2013

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

بواسطة Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang
منشور في 2013