Floating-body effect in partially/dynamically/fully depleted DG/SOI MOSFETs based on unified regional modeling of surface and body potentials

بواسطة Chiah, Siau Ben, Zhou, Xing
منشور في 2014

A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

بواسطة Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben
منشور في 2018

Multi-trap energy states in GaN HEMTs : characterization and modeling

بواسطة Binit Syamal, Zhou, Xing, Chiah, Siau Ben
منشور في 2020

Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs

بواسطة Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Beh, Syamal, Binit
منشور في 2018

Unified regional approach to high temperature SOI DC/AC modeling

بواسطة Chiah, Siau Ben, Zhou, Xing, Chen, Zuhui, Chen, Hung Ming
منشور في 2013

ICMAT 2011 : Reliability and variability of semiconductor devices and ICs

بواسطة Asenov, Asen, Schlichtmann, Ulf, Tan, Cher Ming, Wong, Hei, Zhou, Xing
منشور في 2013

A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression

بواسطة Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2016

Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

بواسطة Gu, Enyao, Hu, Guangxi, Xiang, Ping, Liu, Ran, Wang, Lingli, Zhou, Xing
منشور في 2016

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

بواسطة Ding, Zhihao, Hu, Guangxi, Liu, Ran, Wang, Lingli, Hu, Shuyan, Zhou, Xing
منشور في 2013

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

بواسطة Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong
منشور في 2020

Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

بواسطة Zhang, Junbin, Syamal, Binit, Zhou, Xing, Chiah, Siau Ben, Zhou, Hongtao, Yuan, Li
منشور في 2013

Compact model characteristics for generic MIS-HEMTs

بواسطة Chiah, Siau Ben, Ajaykumar, Arjun, Liu, Xu, Syamal, Binit, Zhou, Hong Tao, Zhou, Xing
منشور في 2019

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

بواسطة Yuan, Li, Wang, Weizhu, Lo, Guo-Qiang, Lee, Kean Boon, Sun, Haifeng, Selvaraj, Susai Lawrence, Zhou, Xing
منشور في 2013

In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations

بواسطة Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Chiah, Ben Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene
منشور في 2019

An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing

بواسطة Ge, Ning, Yoon, Jung Ho, Hu, Miao, Merced-Grafals, E. J., Davila, Noraica, Strachan, John Paul, Li, Zhiyong, Holder, Helen, Xia, Qiangfei, Williams, R. Stanley, Zhou, Xing, Yang, J. Joshua
منشور في 2017

High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers

بواسطة Loke, Wan Khai, Wang, Yue, Lee, Kwang Hong, Liu, Zhihong, Xie, Hanlin, Chiah, Siau Ben, Lee, Kenneth Eng Kian, Zhou, Xing, Tan, Chuan Seng, Ng, Geok Ing, Fitzgerald, Eugene A., Yoon, Soon Fatt
منشور في 2020

Engineering memristor : control over the fourth fundamental element for memory application and beyond

بواسطة Ge, Ning
منشور في 2017

Implementation of a closed-loop-system to reduce tapeout cycle time

بواسطة Viswanathan Surya
منشور في 2018

Optimization of thermal imaging techniques in failure analysis

بواسطة Sidambararajan, Preethy Sudhan
منشور في 2019

Compact modeling of high-voltage (LDMOS/MISHEMT) devices

بواسطة Zhang, Junbin
منشور في 2012