COMPENSATOR DESIGN FOR POWER LOSS REDUCTION ON IGBT SWITCHING

This study discusses the switching of the Insulated Gate Bipolar Transistor (IGBT) in terms of reducing losses due to switching behavior. the losses arising from switching IGBT are the overshoot and transient of the current Ic and voltage Vce, this can be a big impact if applied to the Voltage So...

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Bibliographic Details
Main Author: Sunardi, Egi
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/71049
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Institution: Institut Teknologi Bandung
Language: Indonesia

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