CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR (MOS) THIN FILMS DUE TO GAS ADSORPTION PROCESS BY USING POINT DEFECT - AND DIFFUSION THEORIES

CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR (MOS) THIN FILMS DUE TO GAS ADSORPTION PROCESS BY USING POINT DEFECT - AND DIFFUSION THEORIES

<p>In this work we study the effect of transport mechanism of charge carriers on the conductivity of metal oxide semiconductor (MaS) thin films due to gas adsorption within the framework of diffusion theory of point defect which uses the concept of small polarons and polarons as charge carrier...

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書目詳細資料
Main Authors:	, Muhamad Darwis Umar, , , Kamsul Abraha
格式:	Article NonPeerReviewed
出版:	[Yogyakarta] : Fakultas MIPA Universitas Gadjah Mada 2007
在線閱讀:	https://repository.ugm.ac.id/93848/ http://repository.ugm.ac.id/digitasi/index.php?module=cari_hasil_full&idbuku=1645
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Universitas Gadjah Mada

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