Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions

• المؤلفون الرئيسيون: Koley, Kalyan, Syamal, Binit, Kundu, Atanu, Mohankumar, N., Sarkar, C.K.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/102463; http://hdl.handle.net/10220/11279

DG FETs with underlap architectures exhibit better performance for logic applications owing to its improved immunity to short channel effects. In this work, we have analyzed the effect of symmetric and asymmetric source drain extensions in the underlap DG FETs for improved subthreshold analog and RF...