Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks

Grain boundary (GB) microstructural defects in polycrystalline high-? dielectric thin films may cause localized non-random trap generation during the percolation breakdown (BD) process. We study the effect of this non-random trap generation on the reliability statistics of the metal gate (MG) - high...

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Bibliographic Details
Main Authors: Raghavan, Nagarajan, Pey, Kin Leong, Shubhakar, K., Wu, X., Liu, W. H., Bosman, Michel
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/102573
http://hdl.handle.net/10220/16389
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Institution: Nanyang Technological University
Language: English