Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks

• Main Authors: Raghavan, Nagarajan, Pey, Kin Leong, Shubhakar, K., Wu, X., Liu, W. H., Bosman, Michel
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/102573; http://hdl.handle.net/10220/16389
• Institution: Nanyang Technological University

Grain boundary (GB) microstructural defects in polycrystalline high-? dielectric thin films may cause localized non-random trap generation during the percolation breakdown (BD) process. We study the effect of this non-random trap generation on the reliability statistics of the metal gate (MG) - high...