Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks
Grain boundary (GB) microstructural defects in polycrystalline high-? dielectric thin films may cause localized non-random trap generation during the percolation breakdown (BD) process. We study the effect of this non-random trap generation on the reliability statistics of the metal gate (MG) - high...
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Main Authors: | Raghavan, Nagarajan, Pey, Kin Leong, Shubhakar, K., Wu, X., Liu, W. H., Bosman, Michel |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/102573 http://hdl.handle.net/10220/16389 |
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Institution: | Nanyang Technological University |
Language: | English |
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