Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds

Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds

Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 1...

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Main Authors: Tan, Chuan Seng, Peng, Lan, Fan, Ji, Li, Hong Yu, Gao, Shan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/102699
http://hdl.handle.net/10220/16479
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1026992020-03-07T14:00:34Z Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds Tan, Chuan Seng Peng, Lan Fan, Ji Li, Hong Yu Gao, Shan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10-8 atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 105 cm-2, suitable for future wafer-level 3-D integration. 2013-10-14T06:34:51Z 2019-12-06T20:59:22Z 2013-10-14T06:34:51Z 2019-12-06T20:59:22Z 2012 2012 Journal Article Tan, C. S., Peng, L., Fan, J., Li, H., & Gao, S. (2012). Three-Dimensional Wafer Stacking Using Cu–Cu Bonding for Simultaneous Formation of Electrical, Mechanical, and Hermetic Bonds. IEEE Transactions on Device and Materials Reliability, 12(2), 194-200. https://hdl.handle.net/10356/102699 http://hdl.handle.net/10220/16479 10.1109/TDMR.2012.2188802 en IEEE transactions on device and materials reliability © 2012 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Tan, Chuan Seng
Peng, Lan
Fan, Ji
Li, Hong Yu
Gao, Shan
Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
description Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10-8 atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 105 cm-2, suitable for future wafer-level 3-D integration.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tan, Chuan Seng
Peng, Lan
Fan, Ji
Li, Hong Yu
Gao, Shan
format Article
author Tan, Chuan Seng
Peng, Lan
Fan, Ji
Li, Hong Yu
Gao, Shan
author_sort Tan, Chuan Seng
title Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
title_short Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
title_full Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
title_fullStr Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
title_full_unstemmed Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
title_sort three-dimensional wafer stacking using cu–cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
publishDate 2013
url https://hdl.handle.net/10356/102699
http://hdl.handle.net/10220/16479
_version_ 1681037314743074816

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