Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds

• Main Authors: Tan, Chuan Seng, Peng, Lan, Fan, Ji, Li, Hong Yu, Gao, Shan
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/102699; http://hdl.handle.net/10220/16479

Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 1...