Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

• Main Authors: Tan, K. H., Loke, W. K., Wicaksono, S., Li, D., Leong, Y. R., Yoon, S. F., Sharma, P., Milakovich, T., Bulsara, M. T., Fitzgerald, E. A.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/103010; http://hdl.handle.net/10220/19145
• 機構: Nanyang Technological University

We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. Both devices w...