P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier

• Main Authors: Wu, Wenguang, Gu, Jiangmin, Lim, Wei Meng, Yao, Feijie, Sui, Wenquan, Siek, Liter
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
• Online Access: https://hdl.handle.net/10356/104619; http://hdl.handle.net/10220/26035
• Institution: Nanyang Technological University

A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull is adopted in this PA. The matching circuit in each stage is composed of MIM capacitors and inductors implemented by coplanar waveguide with ground (CPWG). The chip area including pads is 1.08 mm × 0.42 mm. The measured results show the PA provides power gain of 17.3 dB, P1dB of 13.5 dBm, saturated output power (P sat) of 15.1 dBm and power added-efficiency (PAE) of 16% at 60 GHz. The PA consumes 190 mW from the 1.8 V power supply. Small signal measurements indicate that the PA covers the whole license free 60 GHz band.