P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier

A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull...

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Bibliographic Details
Main Authors: Wu, Wenguang, Gu, Jiangmin, Lim, Wei Meng, Yao, Feijie, Sui, Wenquan, Siek, Liter
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
Online Access:https://hdl.handle.net/10356/104619
http://hdl.handle.net/10220/26035
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Institution: Nanyang Technological University
Language: English

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