P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier

A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull...

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Main Authors: Wu, Wenguang, Gu, Jiangmin, Lim, Wei Meng, Yao, Feijie, Sui, Wenquan, Siek, Liter
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
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Online Access:https://hdl.handle.net/10356/104619
http://hdl.handle.net/10220/26035
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1046192020-03-07T13:57:30Z P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier Wu, Wenguang Gu, Jiangmin Lim, Wei Meng Yao, Feijie Sui, Wenquan Siek, Liter School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull is adopted in this PA. The matching circuit in each stage is composed of MIM capacitors and inductors implemented by coplanar waveguide with ground (CPWG). The chip area including pads is 1.08 mm × 0.42 mm. The measured results show the PA provides power gain of 17.3 dB, P1dB of 13.5 dBm, saturated output power (P sat) of 15.1 dBm and power added-efficiency (PAE) of 16% at 60 GHz. The PA consumes 190 mW from the 1.8 V power supply. Small signal measurements indicate that the PA covers the whole license free 60 GHz band. 2015-06-23T07:37:09Z 2019-12-06T21:36:22Z 2015-06-23T07:37:09Z 2019-12-06T21:36:22Z 2015 2015 Journal Article Wu, W., Gu, J., Lim, W. M., Yao, F., Sui, W., & Siek, L. (2015). P1dB optimization methodology for 130 nm SiGe BiCMOS 60 GHz power amplifier. Nanoscience and nanotechnology letters, 7(3), 272-275. 1941-4900 https://hdl.handle.net/10356/104619 http://hdl.handle.net/10220/26035 10.1166/nnl.2015.1941 en Nanoscience and nanotechnology letters © 2015 American Scientific Publishers.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Wu, Wenguang
Gu, Jiangmin
Lim, Wei Meng
Yao, Feijie
Sui, Wenquan
Siek, Liter
P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier
description A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull is adopted in this PA. The matching circuit in each stage is composed of MIM capacitors and inductors implemented by coplanar waveguide with ground (CPWG). The chip area including pads is 1.08 mm × 0.42 mm. The measured results show the PA provides power gain of 17.3 dB, P1dB of 13.5 dBm, saturated output power (P sat) of 15.1 dBm and power added-efficiency (PAE) of 16% at 60 GHz. The PA consumes 190 mW from the 1.8 V power supply. Small signal measurements indicate that the PA covers the whole license free 60 GHz band.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wu, Wenguang
Gu, Jiangmin
Lim, Wei Meng
Yao, Feijie
Sui, Wenquan
Siek, Liter
format Article
author Wu, Wenguang
Gu, Jiangmin
Lim, Wei Meng
Yao, Feijie
Sui, Wenquan
Siek, Liter
author_sort Wu, Wenguang
title P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier
title_short P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier
title_full P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier
title_fullStr P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier
title_full_unstemmed P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier
title_sort p1db optimization methodology for 130 nm sige bicmos 60ghz power amplifier
publishDate 2015
url https://hdl.handle.net/10356/104619
http://hdl.handle.net/10220/26035
_version_ 1681044157481615360