A micro-pulse process of atomic layer deposition of iron oxide using ferrocene and ozone precursors and Ti-doping
Hematite (α-Fe2O3) thin films are obtained by atomic layer deposition (ALD) in the temperature range 200 − 350°C using ferrocene and ozone as the precursors. A micro-pulse process facilitates the precursor adsorption and shortens the ferrocene dose time to 5 s. When tested on Si(100) substrates, the...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/104640 http://hdl.handle.net/10220/16848 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Hematite (α-Fe2O3) thin films are obtained by atomic layer deposition (ALD) in the temperature range 200 − 350°C using ferrocene and ozone as the precursors. A micro-pulse process facilitates the precursor adsorption and shortens the ferrocene dose time to 5 s. When tested on Si(100) substrates, the growth rate is around 0.5 Å per cycle for the first 300 cycles, after which the growth becomes nonlinear. Interestingly, a linear growth can be maintained with a rate of ≈0.55 Å per cycle by TiO2 co-deposition (cycle ratio of TiO2/Fe2O3 = 1:20). Characterizations by X-ray photoemission spectroscopy (XPS), Raman spectroscopy (RS), and UV-vis absorption confirm the presence of the α-Fe2O3 phase after post-deposition annealing. Uniform depositions on dense ZnO nanorod arrays and anodic aluminum oxide (AAO) templates are also demonstrated, inferring that the current process is capable of coating on high (>50) aspect ratio structures. |
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