Characterization of hetero-epitaxial Ge films on Si using multiwavelength micro-raman spectroscopy

• Main Authors: Yoo, Woo Sik, Kang, Kitaek, Ueda, Takeshi, Ishigaki, Toshikazu, Nishigaki, Hiroshi, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Science::Physics::Atomic physics::Solid state physics
• Online Access: https://hdl.handle.net/10356/106992; http://hdl.handle.net/10220/25240; http://dx.doi.org/10.1149/2.0041502jss
• Institution: Nanyang Technological University

To meet various physical property requirements of materials for advanced applications for specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation...