Characterization of hetero-epitaxial Ge films on Si using multiwavelength micro-raman spectroscopy
To meet various physical property requirements of materials for advanced applications for specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation...
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Main Authors: | Yoo, Woo Sik, Kang, Kitaek, Ueda, Takeshi, Ishigaki, Toshikazu, Nishigaki, Hiroshi, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro, Tan, Chuan Seng |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2015
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/106992 http://hdl.handle.net/10220/25240 http://dx.doi.org/10.1149/2.0041502jss |
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Institution: | Nanyang Technological University |
Language: | English |
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