Analytical and experimental characterization of sub-half micron MOS devices

• المؤلف الرئيسي: Chew, Johnny Kok Wai.
• مؤلفون آخرون: Rofail, Samir
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/13187
• المؤسسة: Nanyang Technological University

We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flowing beneath the principal MOS current.