Analytical and experimental characterization of sub-half micron MOS devices

Analytical and experimental characterization of sub-half micron MOS devices

We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Conseq...

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Main Author: Chew, Johnny Kok Wai.
Other Authors: Rofail, Samir
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:http://hdl.handle.net/10356/13187
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-131872023-07-04T16:40:02Z Analytical and experimental characterization of sub-half micron MOS devices Chew, Johnny Kok Wai. Rofail, Samir School of Electrical and Electronic Engineering Yeo, Kiat Seng DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flowing beneath the principal MOS current. Master of Engineering 2008-10-20T07:18:00Z 2008-10-20T07:18:00Z 1998 1998 Thesis http://hdl.handle.net/10356/13187 en 164 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Chew, Johnny Kok Wai.
Analytical and experimental characterization of sub-half micron MOS devices
description We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flowing beneath the principal MOS current.
author2 Rofail, Samir
author_facet Rofail, Samir
Chew, Johnny Kok Wai.
format Theses and Dissertations
author Chew, Johnny Kok Wai.
author_sort Chew, Johnny Kok Wai.
title Analytical and experimental characterization of sub-half micron MOS devices
title_short Analytical and experimental characterization of sub-half micron MOS devices
title_full Analytical and experimental characterization of sub-half micron MOS devices
title_fullStr Analytical and experimental characterization of sub-half micron MOS devices
title_full_unstemmed Analytical and experimental characterization of sub-half micron MOS devices
title_sort analytical and experimental characterization of sub-half micron mos devices
publishDate 2008
url http://hdl.handle.net/10356/13187
_version_ 1772825725237198848

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