Analytical and experimental characterization of sub-half micron MOS devices
We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Conseq...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/13187 |
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Institution: | Nanyang Technological University |
Language: | English |
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