Analytical and experimental characterization of sub-half micron MOS devices

Analytical and experimental characterization of sub-half micron MOS devices

We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Conseq...

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書目詳細資料
主要作者:	Chew, Johnny Kok Wai.
其他作者:	Rofail, Samir
格式:	Theses and Dissertations
語言:	English
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
在線閱讀:	http://hdl.handle.net/10356/13187
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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