Analytical and experimental characterization of sub-half micron MOS devices
We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Conseq...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2008
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/13187 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flowing beneath the principal MOS current. |
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