GeSn alloys fabricated by modified sputtering deposition
Direct band-gap semiconductors have always been an interest to the research community in the area of photonics and optoelectronics. Most commonly used group IV semiconductors such as silicon and germanium have shown their capabilities in the application of microelectronics, however, lack in breakthr...
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| 格式: | Thesis-Doctor of Philosophy |
| 語言: | English |
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Nanyang Technological University
2020
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| 在線閱讀: | https://hdl.handle.net/10356/137192 |
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| 機構: | Nanyang Technological University |
| 語言: | English |