Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond

• Main Authors: Ranjan, Kumud, Arulkumaran, S., Ng, Geok Ing, Sandupatla, A.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2020
• 主題: Engineering::Electrical and electronic engineering; AlGaN/GaN; HEMT
• 在線閱讀: https://hdl.handle.net/10356/137799

We have investigated the self-heating effect on DC and RF performances of identically fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates. Self-heating induced device performances were extracted at different values drain bias voltage ( VD ) and dissipated DC power density...