Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond

• المؤلفون الرئيسيون: Ranjan, Kumud, Arulkumaran, S., Ng, Geok Ing, Sandupatla, A.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; AlGaN/GaN; HEMT
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/137799
• المؤسسة: Nanyang Technological University

We have investigated the self-heating effect on DC and RF performances of identically fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates. Self-heating induced device performances were extracted at different values drain bias voltage ( VD ) and dissipated DC power density...